题目：Weak Galerkin finite element method for semiconductor device simulation

主讲人：高夫征教授

时间：2024年12月1日9:00-10:00

地点：文理大楼723

报告摘要：

This talk will report weak Galerkin finite element methods for semiconductor device simulations. Including drift-diffusion (DD) and high-field (HF) models, which involves not only first derivative convection terms but also second derivative diffusion terms, as well as a coupled Poisson potential equation. The main difficulties in the analysis include the treatment of the nonlinearity and coupling of the models. The optimal order error estimates in a discrete H1 norm and the standard L 2 norm are derived. Numerical experiments are presented to illustrate our theoretical analysis. Moreover, numerical schemes also work out for the discontinuous diffusion coefficient problems.

    个人简介：

高夫征，山东大学数学学院教授/博士生导师，山东省计算数学专委会成员，泰山学者团队骨干成员（2010.06-2015.08），Review Editor in Frontiers in Physics-Statistical and Computational Physics（2022.10-）。美国阿肯色大学小石城校区访问学者。研究方向为偏微分方程数值方法，尤其是弱Galerkin有限元法、间断Galerkin有限元法、有限体积法等数值方法的分析与应用研究。承担完成国家级、省部级科研项目十余项（主持完成国家自然科学基金面上项目、山东省自然科学基金面上项目、山东省优秀中青年科学家科研奖励基金、中国博士后基金项目）、中石化国家科技攻关外协项目一项。现主持国家自然科学基金重点项目子课题一项，在国际知名学术期刊发表SCI论文近50篇。